Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range
Identifieur interne : 00A550 ( Main/Repository ); précédent : 00A549; suivant : 00A551Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range
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Abstract
Optical and electrical characteristics of InGaSb p-n photodetectors are presented at different temperatures. The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 μm, equivalent to 58% quantum efficiency, with 2.3-μm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×1010cmHz1/2/W indicating that InGaSb is a superior material for 2-μm detection applications. © 2004 Society of Photo-Optical Instrumentation Engineers.
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Refaat</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Science and Technology Corporation, 5 Dryden Street, MS 468, Hampton, Virginia 23681</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Science and Technology Corporation, 5 Dryden Street, MS 468, Hampton</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>NASA Langley Research Center, Laser and Electro-optic Branch, 5 Dryden Street, MS 468, Hampton, Virginia 23681</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>NASA Langley Research Center, Laser and Electro-optic Branch, 5 Dryden Street, MS 468, Hampton</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>NASA Langley Research Center, Laser and Electro-optic Branch, Hampton, Virginia 23681</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>NASA Langley Research Center, Laser and Electro-optic Branch, Hampton</wicri:cityArea></affiliation></author><author><name sortKey="Abedin, M Nurul" uniqKey="Abedin M">M. Nurul Abedin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Science and Technology Corporation, 5 Dryden Street, MS 468, Hampton, Virginia 23681</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Science and Technology Corporation, 5 Dryden Street, MS 468, Hampton</wicri:cityArea></affiliation></author><author><name sortKey="Bhat, Ishwara B" uniqKey="Bhat I">Ishwara B. Bhat</name></author><author><name sortKey="Dutta, Partha S" uniqKey="Dutta P">Partha S. Dutta</name></author><author><name sortKey="Singh, Upendra N" uniqKey="Singh U">Upendra N. 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The device structures were grown on GaSb substrates using organic metal vapor phase epitaxy. Spectral calibration indicates peak responsivity around 2 μm, equivalent to 58% quantum efficiency, with 2.3-μm cutoff at room temperature. Reducing the device temperature increases the responsivity and shifts the cutoff wavelength to a shorter value. Current voltage measurements at different temperatures indicate that tunneling is the primary leakage current mechanism. Assuming Johnson limited performance, detectivity calculations resulted in 4×10<sup>10</sup>cmHz<sup>1/2</sup>/W indicating that InGaSb is a superior material for 2-μm detection applications. © 2004 Society of Photo-Optical Instrumentation Engineers.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0091-3286</s0></fA01><fA02 i1="01"><s0>OPEGAR</s0></fA02><fA03 i2="1"><s0>Opt. eng.</s0></fA03><fA05><s2>43</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range</s1></fA08><fA11 i1="01" i2="1"><s1>REFAAT (Tamer F.)</s1></fA11><fA11 i1="02" i2="1"><s1>ABEDIN (M. 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